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  preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. november 2007 rev 1 1/15 15 stp/f30nm60nd-stw30nm60nd stb30nm60nd-sti30nm60nd n-channel 600v - 0.11 ? - 25a to-220/fp/d 2 pak/i 2 pa k / to - 2 4 7 fdmesh? ii power mosfet (with fast diode) features the world?s best r ds(on) *in to-220 amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resistance extremely high dv/dt and avalanche capabilities application switching applications description the fdmesh? ii series belongs to the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. figure 1. internal schematic diagram type v dss r ds(on) max i d stb30nm60nd sti30nm60nd STF30NM60ND stp30nm60nd stw30nm60nd 600v 600v 600v 600v 600v < 0.13 ? < 0.13 ? < 0.13 ? < 0.13 ? < 0.13 ? 25a 25a 25a (1) 25a 25a 1. limited only by maximum temperature allowed to-220 1 2 3 1 2 3 to-220fp 1 3 d 2 pak 1 2 3 i 2 pak to-247 1 2 3 table 1. device summary order codes marking package packaging stb30nm60nd 30nm60nd d2pak tape & reel sti30nm60nd 30nm60nd i2pak tube STF30NM60ND 30nm60nd to-220fp tube stp30nm60nd 30nm60nd to-220 tube stw30nm60nd 30nm60nd to-247 tube www.st.com
contents stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd electrical ratings 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220/d 2 pak i 2 pak / to-247 to-220fp v ds drain-source voltage (v gs = 0) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 25 25 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100c 15.75 15.75 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 100 100 (1) a p tot total dissipation at t c = 25c 190 40 w derating factor 1.51 0.24 w/c dv/dt (3) 3. i sd 25a, di/dt 600a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns viso insulation withstand voltage (rms) from all three leads to external heat sink (t=1s;t c =25c) -- 2500 v t stg storage temperature ?55 to 150 150 c t j max. operating junction temperature table 3. thermal data symbol parameter to-220 d2pak/i2pak to-247 to-220fp unit rthj-case thermal resistance junction-case max 0.66 3.1 c/w rthj-amb thermal resistance juncti on-ambient max 62.5 50 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not- repetitive (pulse width limited by t j max) tbd a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) tbd mj
electrical characteristics stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 4/15 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions value unit min. typ. max. v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 600 v dv/dt (1) 1. characteristic value at turn off on inductive load drain source voltage slope v dd = 480v, i d = 25a, v gs = 10v 48 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating @125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 12.5 a 0.11 0.13 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15 v , i d = 12.5 a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 3000 600 90 pf pf pf c oss eq. (2) 2. c oss eq . is defined as a constant equivalent ca pacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0v, v ds = 0v to 480v tbd pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =300 v, i d = 12.5a r g =4.7 ? v gs = 10v (see figure 7), (see figure 2) tbd tbd tbd tbd ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 25a, v gs = 10v, (see figure 3) 100 tbd tbd nc nc nc r g gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 1.6 ?
stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd electrical characteristics 5/15 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 25 100 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 25a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25a, v dd = 60v di/dt=100a/s (see figure 4) tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25a,v dd = 60v di/dt=100a/s, t j = 150c (see figure 4) tbd tbd tbd ns c a
test circuit stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 6/15 3 test circuit figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform
stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd package mechanical data 7/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 8/15 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 9 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd package mechanical data 9/15 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
package mechanical data stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 10/15 dim. mm. inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd package mechanical data 11/15 d2pak mechanical data dim mm inch min typ max min typ max a 4.4 4.6 0.17 3 0.1 8 1 a1 2.4 9 2.6 9 0.0 98 0.106 a2 0.0 3 0.2 3 0.001 0.00 9 b 0.7 0. 93 0.027 0.0 3 6 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.02 3 c2 1.2 3 1. 3 6 0.04 8 0.05 3 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 d1 8 0. 3 15 e 10 10.4 0. 393 0.40 9 e1 8 .5 0. 33 4 g4. 88 5.2 8 0.1 9 20.20 8 l15 15. 8 5 0.5 9 0 0.625 l2 1.27 1.4 0.50 0.55 l 3 1.4 1.75 0.055 0.6 8 m2.4 3 .2 0.0 9 40.126 r 0.4 0.015 v2 0 4
package mechanical data stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 12/15 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd packing mechanical data 13/15 5 packing mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
revision history stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 14/15 6 revision history table 8. document revision history date revision changes 06-nov-2007 1 initial release.
stp/f30nm60nd - stb30nm60nd - sti30nm60nd - stw30nm60nd 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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